FET BASED HUMIDITY SENSOR WITH BARRIER LAYER PROTECTING GATE DIELECTRIC

An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substra...

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Bibliographische Detailangaben

Hauptverfasser:	BOSTAN, Cazimir Gabriel, COBIANU, Cornel, DAVIS, Richard, STRATULAT, Alisa, SERBAN, Bogdan, BUIU, Octavian, BREZEANU, Mihai, COSTEA, Stefan Dan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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