TRANSITION METAL OXIDE RESISTIVE SWITCHING DEVICE WITH DOPED BUFFER REGION

A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first...

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Bibliographische Detailangaben

Hauptverfasser:	CELINSKA, Jolanta, PAZ DE ARAUJO, Carlos A, MCWILLIAMS, Christopher R
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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