VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME

VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME

Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAKAJIMA, Tomohiko, SHINODA, Kentaro, TSUCHIYA, Tetsuo, ISHIZAKI, Haruo
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NAKAJIMA, Tomohiko
SHINODA, Kentaro
TSUCHIYA, Tetsuo
ISHIZAKI, Haruo
description Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol% based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3214045A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3214045A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3214045A13</originalsourceid><addsrcrecordid>eNrjZDAKc_RzdPEM9VXwj_B0cVVw8_TxVXD0c1EICPJ3dg0OVnDzDwKxXUKdPf3cFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxkaGJgYmpo6ExEUoAFcQmJw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME</title><source>esp@cenet</source><creator>NAKAJIMA, Tomohiko ; SHINODA, Kentaro ; TSUCHIYA, Tetsuo ; ISHIZAKI, Haruo</creator><creatorcontrib>NAKAJIMA, Tomohiko ; SHINODA, Kentaro ; TSUCHIYA, Tetsuo ; ISHIZAKI, Haruo</creatorcontrib><description>Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol% based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.</description><language>eng ; fre ; ger</language><subject>CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; INORGANIC CHEMISTRY ; METALLURGY</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170906&amp;DB=EPODOC&amp;CC=EP&amp;NR=3214045A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170906&amp;DB=EPODOC&amp;CC=EP&amp;NR=3214045A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAJIMA, Tomohiko</creatorcontrib><creatorcontrib>SHINODA, Kentaro</creatorcontrib><creatorcontrib>TSUCHIYA, Tetsuo</creatorcontrib><creatorcontrib>ISHIZAKI, Haruo</creatorcontrib><title>VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME</title><description>Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol% based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.</description><subject>CHEMISTRY</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKc_RzdPEM9VXwj_B0cVVw8_TxVXD0c1EICPJ3dg0OVnDzDwKxXUKdPf3cFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxkaGJgYmpo6ExEUoAFcQmJw</recordid><startdate>20170906</startdate><enddate>20170906</enddate><creator>NAKAJIMA, Tomohiko</creator><creator>SHINODA, Kentaro</creator><creator>TSUCHIYA, Tetsuo</creator><creator>ISHIZAKI, Haruo</creator><scope>EVB</scope></search><sort><creationdate>20170906</creationdate><title>VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME</title><author>NAKAJIMA, Tomohiko ; SHINODA, Kentaro ; TSUCHIYA, Tetsuo ; ISHIZAKI, Haruo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3214045A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>CHEMISTRY</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAJIMA, Tomohiko</creatorcontrib><creatorcontrib>SHINODA, Kentaro</creatorcontrib><creatorcontrib>TSUCHIYA, Tetsuo</creatorcontrib><creatorcontrib>ISHIZAKI, Haruo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAJIMA, Tomohiko</au><au>SHINODA, Kentaro</au><au>TSUCHIYA, Tetsuo</au><au>ISHIZAKI, Haruo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME</title><date>2017-09-06</date><risdate>2017</risdate><abstract>Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol% based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3214045A1
source esp@cenet
subjects CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
title VANADIUM OXIDE FILM AND PROCESS FOR PRODUCING SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T17%3A07%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKAJIMA,%20Tomohiko&rft.date=2017-09-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3214045A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true