INTEGRATED CAPACITIVE HUMIDITY SENSOR

A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, pac...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHANG, Qing, CHOUDHURI, Mohommad Mahbub, ZEB, Gui
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.