DOUBLE HETEROJUNCTION III-NITRIDE STRUCTURES

DOUBLE HETEROJUNCTION III-NITRIDE STRUCTURES

A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of th...

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Bibliographische Detailangaben
Hauptverfasser: KAZIOR, Thomas, E, CHUMBES, Eduardo, M, REZA, Shahed, SOLLNER, Gerhard
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer. The channel layer has disposed therein a predetermined n-type conductive dopant.