METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES
A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, etching the stack to form at least one opening in the stack and forming at least one charge stora...
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| creator | MATAMIS, George MAKALA, Raghuveer S SHARANGPANI, Rahul |
| description | A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, etching the stack to form at least one opening in the stack and forming at least one charge storage region over a sidewall of the at least one opening. The method also includes forming a tunnel dielectric layer over the at least one charge storage region in the at least one opening, forming a semiconductor channel material over the tunnel dielectric layer in the at least one opening, selectively removing at least portions of the second material layers to form recesses between adjacent first material layers and forming ruthenium control gate electrodes in the recesses. |
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The method also includes forming a tunnel dielectric layer over the at least one charge storage region in the at least one opening, forming a semiconductor channel material over the tunnel dielectric layer in the at least one opening, selectively removing at least portions of the second material layers to form recesses between adjacent first material layers and forming ruthenium control gate electrodes in the recesses.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200129&DB=EPODOC&CC=EP&NR=3183747B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200129&DB=EPODOC&CC=EP&NR=3183747B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATAMIS, George</creatorcontrib><creatorcontrib>MAKALA, Raghuveer S</creatorcontrib><creatorcontrib>SHARANGPANI, Rahul</creatorcontrib><title>METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES</title><description>A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, etching the stack to form at least one opening in the stack and forming at least one charge storage region over a sidewall of the at least one opening. The method also includes forming a tunnel dielectric layer over the at least one charge storage region in the at least one opening, forming a semiconductor channel material over the tunnel dielectric layer in the at least one opening, selectively removing at least portions of the second material layers to form recesses between adjacent first material layers and forming ruthenium control gate electrodes in the recesses.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1dQ1x9FEI9w9yUfDx9HMNVnDzD1II8QhydVVw8fR19Qv29PcDKvB19fUPilRwcQ3zdHYN5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BxoYWxuYm5k6GxkQoAQCZaCdA</recordid><startdate>20200129</startdate><enddate>20200129</enddate><creator>MATAMIS, George</creator><creator>MAKALA, Raghuveer S</creator><creator>SHARANGPANI, Rahul</creator><scope>EVB</scope></search><sort><creationdate>20200129</creationdate><title>METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES</title><author>MATAMIS, George ; MAKALA, Raghuveer S ; SHARANGPANI, Rahul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3183747B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MATAMIS, George</creatorcontrib><creatorcontrib>MAKALA, Raghuveer S</creatorcontrib><creatorcontrib>SHARANGPANI, Rahul</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATAMIS, George</au><au>MAKALA, Raghuveer S</au><au>SHARANGPANI, Rahul</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES</title><date>2020-01-29</date><risdate>2020</risdate><abstract>A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, etching the stack to form at least one opening in the stack and forming at least one charge storage region over a sidewall of the at least one opening. The method also includes forming a tunnel dielectric layer over the at least one charge storage region in the at least one opening, forming a semiconductor channel material over the tunnel dielectric layer in the at least one opening, selectively removing at least portions of the second material layers to form recesses between adjacent first material layers and forming ruthenium control gate electrodes in the recesses.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES |
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