CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an...

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description Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3183743A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3183743A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3183743A43</originalsourceid><addsrcrecordid>eNrjZLB2DvIPDlYIdnb0UwgI8o_w9PUMiVRw9g8KcnUO8fT3Uwj3DPFQcHVydfRVCPXzDHMNCnb0UXAODQlxDeJhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcaGFsbmJsaOJsZEKAEAuSopTA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER</title><source>esp@cenet</source><creator>BORODOVSKY, Yan A</creator><creatorcontrib>BORODOVSKY, Yan A</creatorcontrib><description>Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180418&amp;DB=EPODOC&amp;CC=EP&amp;NR=3183743A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180418&amp;DB=EPODOC&amp;CC=EP&amp;NR=3183743A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BORODOVSKY, Yan A</creatorcontrib><title>CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER</title><description>Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2DvIPDlYIdnb0UwgI8o_w9PUMiVRw9g8KcnUO8fT3Uwj3DPFQcHVydfRVCPXzDHMNCnb0UXAODQlxDeJhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcaGFsbmJsaOJsZEKAEAuSopTA</recordid><startdate>20180418</startdate><enddate>20180418</enddate><creator>BORODOVSKY, Yan A</creator><scope>EVB</scope></search><sort><creationdate>20180418</creationdate><title>CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER</title><author>BORODOVSKY, Yan A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3183743A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BORODOVSKY, Yan A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BORODOVSKY, Yan A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER</title><date>2018-04-18</date><risdate>2018</risdate><abstract>Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title CROSS SCAN PROXIMITY CORRECTION WITH EBEAM UNIVERSAL CUTTER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T14%3A17%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BORODOVSKY,%20Yan%20A&rft.date=2018-04-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3183743A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true