OXIDE SINTERED BODY AND METHOD OF MANUFACTURING SAME, SPUTTER TARGET, AND SEMICONDUCTOR DEVICE
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm 3 and equal to or lower than 7.2 g/cm 3 , a content rate of tungsten to a total...
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| creator | WATATANI, Kenichi MIYANAGA, Miki SOGABE, Koichi AWATA, Hideaki |
| description | There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm 3 and equal to or lower than 7.2 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target. |
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There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.</description><language>eng ; fre ; ger</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170621&DB=EPODOC&CC=EP&NR=3181537A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170621&DB=EPODOC&CC=EP&NR=3181537A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WATATANI, Kenichi</creatorcontrib><creatorcontrib>MIYANAGA, Miki</creatorcontrib><creatorcontrib>SOGABE, Koichi</creatorcontrib><creatorcontrib>AWATA, Hideaki</creatorcontrib><title>OXIDE SINTERED BODY AND METHOD OF MANUFACTURING SAME, SPUTTER TARGET, AND SEMICONDUCTOR DEVICE</title><description>There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm 3 and equal to or lower than 7.2 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEKwjAUgOEuDqLe4R2gDiGIrjHvpc2QpCQvRRdLkTiJFur9UcQDOP3L_y2rSzhZJEjWM0VCOAY8g_IIjrgNCMGAUz4bpTlH6xtIylENqcv8AcAqNsT1VyRyVgePWXOIgNRbTetqcRvvc9n8uqrAEOt2W6bnUOZpvJZHeQ3USXEQO7lXQv6xvAGXyDJF</recordid><startdate>20170621</startdate><enddate>20170621</enddate><creator>WATATANI, Kenichi</creator><creator>MIYANAGA, Miki</creator><creator>SOGABE, Koichi</creator><creator>AWATA, Hideaki</creator><scope>EVB</scope></search><sort><creationdate>20170621</creationdate><title>OXIDE SINTERED BODY AND METHOD OF MANUFACTURING SAME, SPUTTER TARGET, AND SEMICONDUCTOR DEVICE</title><author>WATATANI, Kenichi ; MIYANAGA, Miki ; SOGABE, Koichi ; AWATA, Hideaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3181537A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>WATATANI, Kenichi</creatorcontrib><creatorcontrib>MIYANAGA, Miki</creatorcontrib><creatorcontrib>SOGABE, Koichi</creatorcontrib><creatorcontrib>AWATA, Hideaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WATATANI, Kenichi</au><au>MIYANAGA, Miki</au><au>SOGABE, Koichi</au><au>AWATA, Hideaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OXIDE SINTERED BODY AND METHOD OF MANUFACTURING SAME, SPUTTER TARGET, AND SEMICONDUCTOR DEVICE</title><date>2017-06-21</date><risdate>2017</risdate><abstract>There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm 3 and equal to or lower than 7.2 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | OXIDE SINTERED BODY AND METHOD OF MANUFACTURING SAME, SPUTTER TARGET, AND SEMICONDUCTOR DEVICE |
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