SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER
The present invention addresses the problem of providing: a silicon nitride sintered body and a circuit substrate which exhibit both high mechanical strength and high thermal conductivity; a silicon nitride powder used as a starting material for these; and a production method for the silicon nitride...
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| creator | YAMAO, Takeshi HONDA, Michio JIDA, Shinsuke |
| description | The present invention addresses the problem of providing: a silicon nitride sintered body and a circuit substrate which exhibit both high mechanical strength and high thermal conductivity; a silicon nitride powder used as a starting material for these; and a production method for the silicon nitride powder. Provided is a silicon nitride powder which has a specific surface area of 4.0-9.0 m 2 /g, a ² phase ratio of less than 40%, and an oxygen content of 0.20-0.95 mass%, said silicon nitride powder wherein: the frequency distribution curve obtained from a volume-based particle size distribution measurement performed using laser diffraction scattering has two peaks; the tops of the peaks are within the range of 0.4-0.7 µm, and within the range of 1.5-3.0 µm respectively; the ratio (the frequency of the top of the peak in the particle size range of 0.4-0.7 µm/the frequency of the top of the peak in the particle size range of 1.5-3.0 µm) of the frequencies of the tops of the peaks is 0.5-1.5; and the ratio (D50/D BET ) (µm/µm) of the median diameter (D50) (µm) obtained from the particle size distribution measurement, to the specific surface area equivalent diameter (D BET ) (µm) calculated from the specific surface area is at least 3.5. Also provided are: a silicon nitride sintered body and a circuit substrate which are obtained from the silicon nitride powder; and a production method for the silicon nitride powder. |
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Provided is a silicon nitride powder which has a specific surface area of 4.0-9.0 m 2 /g, a ² phase ratio of less than 40%, and an oxygen content of 0.20-0.95 mass%, said silicon nitride powder wherein: the frequency distribution curve obtained from a volume-based particle size distribution measurement performed using laser diffraction scattering has two peaks; the tops of the peaks are within the range of 0.4-0.7 µm, and within the range of 1.5-3.0 µm respectively; the ratio (the frequency of the top of the peak in the particle size range of 0.4-0.7 µm/the frequency of the top of the peak in the particle size range of 1.5-3.0 µm) of the frequencies of the tops of the peaks is 0.5-1.5; and the ratio (D50/D BET ) (µm/µm) of the median diameter (D50) (µm) obtained from the particle size distribution measurement, to the specific surface area equivalent diameter (D BET ) (µm) calculated from the specific surface area is at least 3.5. 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Provided is a silicon nitride powder which has a specific surface area of 4.0-9.0 m 2 /g, a ² phase ratio of less than 40%, and an oxygen content of 0.20-0.95 mass%, said silicon nitride powder wherein: the frequency distribution curve obtained from a volume-based particle size distribution measurement performed using laser diffraction scattering has two peaks; the tops of the peaks are within the range of 0.4-0.7 µm, and within the range of 1.5-3.0 µm respectively; the ratio (the frequency of the top of the peak in the particle size range of 0.4-0.7 µm/the frequency of the top of the peak in the particle size range of 1.5-3.0 µm) of the frequencies of the tops of the peaks is 0.5-1.5; and the ratio (D50/D BET ) (µm/µm) of the median diameter (D50) (µm) obtained from the particle size distribution measurement, to the specific surface area equivalent diameter (D BET ) (µm) calculated from the specific surface area is at least 3.5. Also provided are: a silicon nitride sintered body and a circuit substrate which are obtained from the silicon nitride powder; and a production method for the silicon nitride powder.</description><subject>ARTIFICIAL STONE</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS THEREOF</subject><subject>CONCRETE</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS</subject><subject>INORGANIC CHEMISTRY</subject><subject>LIME, MAGNESIA</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRINTED CIRCUITS</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTEKwkAQRdNYiHqHOUAsZDX9ZmdCBnQ3zE4IViHIWokG4gk8uSJWYmH14PE-f549Iu_ZBQ-eVRgJmtAhSQ7fPrJXEkIoAx7BegTH4lpWiG0ZVaxS_taNBGyd8mt7IK0DQhUEomWE31_LbHYeLlNafbjIoCJ19TqNtz5N43BK13TvqTGbXWGKwm7NH8kTdCM8Xw</recordid><startdate>20171129</startdate><enddate>20171129</enddate><creator>YAMAO, Takeshi</creator><creator>HONDA, Michio</creator><creator>JIDA, Shinsuke</creator><scope>EVB</scope></search><sort><creationdate>20171129</creationdate><title>SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER</title><author>YAMAO, Takeshi ; HONDA, Michio ; JIDA, Shinsuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3156366A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>ARTIFICIAL STONE</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS THEREOF</topic><topic>CONCRETE</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS</topic><topic>INORGANIC CHEMISTRY</topic><topic>LIME, MAGNESIA</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRINTED CIRCUITS</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAO, Takeshi</creatorcontrib><creatorcontrib>HONDA, Michio</creatorcontrib><creatorcontrib>JIDA, Shinsuke</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAO, Takeshi</au><au>HONDA, Michio</au><au>JIDA, Shinsuke</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER</title><date>2017-11-29</date><risdate>2017</risdate><abstract>The present invention addresses the problem of providing: a silicon nitride sintered body and a circuit substrate which exhibit both high mechanical strength and high thermal conductivity; a silicon nitride powder used as a starting material for these; and a production method for the silicon nitride powder. Provided is a silicon nitride powder which has a specific surface area of 4.0-9.0 m 2 /g, a ² phase ratio of less than 40%, and an oxygen content of 0.20-0.95 mass%, said silicon nitride powder wherein: the frequency distribution curve obtained from a volume-based particle size distribution measurement performed using laser diffraction scattering has two peaks; the tops of the peaks are within the range of 0.4-0.7 µm, and within the range of 1.5-3.0 µm respectively; the ratio (the frequency of the top of the peak in the particle size range of 0.4-0.7 µm/the frequency of the top of the peak in the particle size range of 1.5-3.0 µm) of the frequencies of the tops of the peaks is 0.5-1.5; and the ratio (D50/D BET ) (µm/µm) of the median diameter (D50) (µm) obtained from the particle size distribution measurement, to the specific surface area equivalent diameter (D BET ) (µm) calculated from the specific surface area is at least 3.5. Also provided are: a silicon nitride sintered body and a circuit substrate which are obtained from the silicon nitride powder; and a production method for the silicon nitride powder.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS INORGANIC CHEMISTRY LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY NON-METALLIC ELEMENTS PRINTED CIRCUITS REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
| title | SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER |
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