BONDING WIRE FOR SEMICONDUCTOR DEVICE
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | OYAMADA Tetsuya DEAI Hiroyuki UNO Tomohiro |
| description | There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3136427A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3136427A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3136427A43</originalsourceid><addsrcrecordid>eNrjZFB18vdz8fRzVwj3DHJVcPMPUgh29fV0BgqGOocAeS6uYZ7OrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wNjQ2MzEyNzRxJgIJQBYpyLc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>OYAMADA Tetsuya ; DEAI Hiroyuki ; UNO Tomohiro</creator><creatorcontrib>OYAMADA Tetsuya ; DEAI Hiroyuki ; UNO Tomohiro</creatorcontrib><description>There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.</description><language>eng ; fre ; ger</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; METALLURGY ; SEMICONDUCTOR DEVICES ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180314&DB=EPODOC&CC=EP&NR=3136427A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180314&DB=EPODOC&CC=EP&NR=3136427A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OYAMADA Tetsuya</creatorcontrib><creatorcontrib>DEAI Hiroyuki</creatorcontrib><creatorcontrib>UNO Tomohiro</creatorcontrib><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><description>There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB18vdz8fRzVwj3DHJVcPMPUgh29fV0BgqGOocAeS6uYZ7OrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wNjQ2MzEyNzRxJgIJQBYpyLc</recordid><startdate>20180314</startdate><enddate>20180314</enddate><creator>OYAMADA Tetsuya</creator><creator>DEAI Hiroyuki</creator><creator>UNO Tomohiro</creator><scope>EVB</scope></search><sort><creationdate>20180314</creationdate><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><author>OYAMADA Tetsuya ; DEAI Hiroyuki ; UNO Tomohiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3136427A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>OYAMADA Tetsuya</creatorcontrib><creatorcontrib>DEAI Hiroyuki</creatorcontrib><creatorcontrib>UNO Tomohiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OYAMADA Tetsuya</au><au>DEAI Hiroyuki</au><au>UNO Tomohiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><date>2018-03-14</date><risdate>2018</risdate><abstract>There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP3136427A4 |
| source | esp@cenet |
| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | BONDING WIRE FOR SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T10%3A05%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OYAMADA%20Tetsuya&rft.date=2018-03-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3136427A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |