FORMATION OF OHMIC CONTACTS ON WIDE BAND GAP SEMICONDUCTORS

FORMATION OF OHMIC CONTACTS ON WIDE BAND GAP SEMICONDUCTORS

Systems and methods for semiconductor wafer processing include irradiating a surface of a semiconductor wafer with a laser beam of sufficient energy to alter a band gap of semiconductor material thereby melting a portion of the wafer to generate a graphitic layer area. A metal layer is then depositi...

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Bibliographische Detailangaben
1. Verfasser: HOSTETLER, John L
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Systems and methods for semiconductor wafer processing include irradiating a surface of a semiconductor wafer with a laser beam of sufficient energy to alter a band gap of semiconductor material thereby melting a portion of the wafer to generate a graphitic layer area. A metal layer is then depositing on the surface to create ohmic contacts at the area that where melted by the laser.