MIXED ABRASIVE TUNGSTEN CMP COMPOSITION
A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neu...
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| creator | GRUMBINE, Steven DYSARD, Jeffrey |
| description | A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3122836A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3122836A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3122836A43</originalsourceid><addsrcrecordid>eNrjZFD39YxwdVFwdApyDPYMc1UICfVzDw5x9VNw9g1QcPb3DfAP9gzx9PfjYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGhkZGFsZmjibGRCgBALIJI54</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MIXED ABRASIVE TUNGSTEN CMP COMPOSITION</title><source>esp@cenet</source><creator>GRUMBINE, Steven ; DYSARD, Jeffrey</creator><creatorcontrib>GRUMBINE, Steven ; DYSARD, Jeffrey</creatorcontrib><description>A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171108&DB=EPODOC&CC=EP&NR=3122836A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171108&DB=EPODOC&CC=EP&NR=3122836A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GRUMBINE, Steven</creatorcontrib><creatorcontrib>DYSARD, Jeffrey</creatorcontrib><title>MIXED ABRASIVE TUNGSTEN CMP COMPOSITION</title><description>A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD39YxwdVFwdApyDPYMc1UICfVzDw5x9VNw9g1QcPb3DfAP9gzx9PfjYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGhkZGFsZmjibGRCgBALIJI54</recordid><startdate>20171108</startdate><enddate>20171108</enddate><creator>GRUMBINE, Steven</creator><creator>DYSARD, Jeffrey</creator><scope>EVB</scope></search><sort><creationdate>20171108</creationdate><title>MIXED ABRASIVE TUNGSTEN CMP COMPOSITION</title><author>GRUMBINE, Steven ; DYSARD, Jeffrey</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3122836A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GRUMBINE, Steven</creatorcontrib><creatorcontrib>DYSARD, Jeffrey</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GRUMBINE, Steven</au><au>DYSARD, Jeffrey</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MIXED ABRASIVE TUNGSTEN CMP COMPOSITION</title><date>2017-11-08</date><risdate>2017</risdate><abstract>A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | MIXED ABRASIVE TUNGSTEN CMP COMPOSITION |
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