FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotube...

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Hauptverfasser: JOO, Yongho, BRADY, Gerald Joseph, GOPALAN, Padma, ARNOLD, Michael Scott, EVENSEN, Harold T
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creator JOO, Yongho
BRADY, Gerald Joseph
GOPALAN, Padma
ARNOLD, Michael Scott
EVENSEN, Harold T
description High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3105175B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3105175B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3105175B13</originalsourceid><addsrcrecordid>eNqNy00KwjAQQOFsXIh6h7mAYCjF9SSZNIFmUvKzLkXiSrRQ748IHsDV23xvL9j6MYCOYUo-ex4ARz8wGdCYVGRg5FiqogzIBgIVF02GaCEgV4u61PS9iiPIGOgodvflsbXTrwcBlop257a-5raty60923umqZOXXl57Jbs_yAekJi3d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>JOO, Yongho ; BRADY, Gerald Joseph ; GOPALAN, Padma ; ARNOLD, Michael Scott ; EVENSEN, Harold T</creator><creatorcontrib>JOO, Yongho ; BRADY, Gerald Joseph ; GOPALAN, Padma ; ARNOLD, Michael Scott ; EVENSEN, Harold T</creatorcontrib><description>High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210623&amp;DB=EPODOC&amp;CC=EP&amp;NR=3105175B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210623&amp;DB=EPODOC&amp;CC=EP&amp;NR=3105175B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOO, Yongho</creatorcontrib><creatorcontrib>BRADY, Gerald Joseph</creatorcontrib><creatorcontrib>GOPALAN, Padma</creatorcontrib><creatorcontrib>ARNOLD, Michael Scott</creatorcontrib><creatorcontrib>EVENSEN, Harold T</creatorcontrib><title>FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME</title><description>High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy00KwjAQQOFsXIh6h7mAYCjF9SSZNIFmUvKzLkXiSrRQ748IHsDV23xvL9j6MYCOYUo-ex4ARz8wGdCYVGRg5FiqogzIBgIVF02GaCEgV4u61PS9iiPIGOgodvflsbXTrwcBlop257a-5raty60923umqZOXXl57Jbs_yAekJi3d</recordid><startdate>20210623</startdate><enddate>20210623</enddate><creator>JOO, Yongho</creator><creator>BRADY, Gerald Joseph</creator><creator>GOPALAN, Padma</creator><creator>ARNOLD, Michael Scott</creator><creator>EVENSEN, Harold T</creator><scope>EVB</scope></search><sort><creationdate>20210623</creationdate><title>FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME</title><author>JOO, Yongho ; BRADY, Gerald Joseph ; GOPALAN, Padma ; ARNOLD, Michael Scott ; EVENSEN, Harold T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3105175B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JOO, Yongho</creatorcontrib><creatorcontrib>BRADY, Gerald Joseph</creatorcontrib><creatorcontrib>GOPALAN, Padma</creatorcontrib><creatorcontrib>ARNOLD, Michael Scott</creatorcontrib><creatorcontrib>EVENSEN, Harold T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOO, Yongho</au><au>BRADY, Gerald Joseph</au><au>GOPALAN, Padma</au><au>ARNOLD, Michael Scott</au><au>EVENSEN, Harold T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME</title><date>2021-06-23</date><risdate>2021</risdate><abstract>High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
NANOTECHNOLOGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
title FILM COMPRISING ALIGNED CARBON NANOTUBES AND METHODS OF MANUFACTURING THE SAME
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