POWER SEMICONDUCTOR DEVICE
A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrod...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point. |
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