METHOD AND SYSTEM FOR DEPOSITING OXIDE ON A POROUS COMPONENT

The invention relates to a method and system for forming a layer of oxide on a pervious component made of a material or a stack of materials that are stable at 400° C., said component including an outer surface to be coated and at least one pore with a diameter of 50 to 1000 μm leading onto said out...

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Hauptverfasser: ROUSSEAU, Frédéric, MORVAN, Daniel, BACOS, Marie-Pierre
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Sprache:eng ; fre ; ger
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creator ROUSSEAU, Frédéric
MORVAN, Daniel
BACOS, Marie-Pierre
description The invention relates to a method and system for forming a layer of oxide on a pervious component made of a material or a stack of materials that are stable at 400° C., said component including an outer surface to be coated and at least one pore with a diameter of 50 to 1000 μm leading onto said outer surface. Said method includes the following steps: a) injecting a carrier gas loaded with droplets of at least one precursor of the oxide into a low-pressure plasma inside an enclosure of a plasma reactor housing the component to be coated, and injecting a fluid passing through the pervious component and flowing in gaseous state through said at least one pore with a flow opposite to that of the carrier gas in the plasma chamber in order to avoid the clogging of the pore, the pressure and the mass flow of said fluid upstream of the pervious component being such that the pressure of the gas at the outlet of the at least one pore is higher than the pressure in the plasma chamber, and the injection mass flow of the fluid passing through the pervious component is: α) less than or equal to the mass low of the carrier gas loaded with precursor of the oxide injected into the plasma chamber, and β) greater than or equal to the product of the mass flow of the carrier gas loaded with precursors of the oxide injected into the plasma chamber by the ration between the total surface of the open pores of the pervious component and the surface of the passage section of the plasma chamber, thus, the speed of the gas at the outlet of the at least one pore is no lower than the intake speed of the carrier gas loaded with at least one precursor of the oxide in, non-preferentially, the liquid, gel or solid state thereof, on the outer surface of the component; b) injecting a carrier gas not loaded with a precursor of the oxide into a plasma inside the plasma chamber, wherein the injection of the fluid passing through the pervious component is maintained and steps a) and b) are repeated, such as to form said oxide on the outer surface, the diameter of the at least one pore being preserved.
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Said method includes the following steps: a) injecting a carrier gas loaded with droplets of at least one precursor of the oxide into a low-pressure plasma inside an enclosure of a plasma reactor housing the component to be coated, and injecting a fluid passing through the pervious component and flowing in gaseous state through said at least one pore with a flow opposite to that of the carrier gas in the plasma chamber in order to avoid the clogging of the pore, the pressure and the mass flow of said fluid upstream of the pervious component being such that the pressure of the gas at the outlet of the at least one pore is higher than the pressure in the plasma chamber, and the injection mass flow of the fluid passing through the pervious component is: α) less than or equal to the mass low of the carrier gas loaded with precursor of the oxide injected into the plasma chamber, and β) greater than or equal to the product of the mass flow of the carrier gas loaded with precursors of the oxide injected into the plasma chamber by the ration between the total surface of the open pores of the pervious component and the surface of the passage section of the plasma chamber, thus, the speed of the gas at the outlet of the at least one pore is no lower than the intake speed of the carrier gas loaded with at least one precursor of the oxide in, non-preferentially, the liquid, gel or solid state thereof, on the outer surface of the component; b) injecting a carrier gas not loaded with a precursor of the oxide into a plasma inside the plasma chamber, wherein the injection of the fluid passing through the pervious component is maintained and steps a) and b) are repeated, such as to form said oxide on the outer surface, the diameter of the at least one pore being preserved.</description><language>eng ; fre ; ger</language><subject>APPARATUS THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; ATOMISING APPARATUS ; BLASTING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; ENGINE PLANTS IN GENERAL ; HEATING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIGHTING ; MACHINES OR ENGINES IN GENERAL ; MECHANICAL ENGINEERING ; METALLURGY ; NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAMTURBINES ; NOZZLES ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SPRAYING APPARATUS ; SPRAYING OR ATOMISING IN GENERAL ; STEAM ENGINES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; WEAPONS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170816&amp;DB=EPODOC&amp;CC=EP&amp;NR=3077569B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170816&amp;DB=EPODOC&amp;CC=EP&amp;NR=3077569B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROUSSEAU, Frédéric</creatorcontrib><creatorcontrib>MORVAN, Daniel</creatorcontrib><creatorcontrib>BACOS, Marie-Pierre</creatorcontrib><title>METHOD AND SYSTEM FOR DEPOSITING OXIDE ON A POROUS COMPONENT</title><description>The invention relates to a method and system for forming a layer of oxide on a pervious component made of a material or a stack of materials that are stable at 400° C., said component including an outer surface to be coated and at least one pore with a diameter of 50 to 1000 μm leading onto said outer surface. 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Said method includes the following steps: a) injecting a carrier gas loaded with droplets of at least one precursor of the oxide into a low-pressure plasma inside an enclosure of a plasma reactor housing the component to be coated, and injecting a fluid passing through the pervious component and flowing in gaseous state through said at least one pore with a flow opposite to that of the carrier gas in the plasma chamber in order to avoid the clogging of the pore, the pressure and the mass flow of said fluid upstream of the pervious component being such that the pressure of the gas at the outlet of the at least one pore is higher than the pressure in the plasma chamber, and the injection mass flow of the fluid passing through the pervious component is: α) less than or equal to the mass low of the carrier gas loaded with precursor of the oxide injected into the plasma chamber, and β) greater than or equal to the product of the mass flow of the carrier gas loaded with precursors of the oxide injected into the plasma chamber by the ration between the total surface of the open pores of the pervious component and the surface of the passage section of the plasma chamber, thus, the speed of the gas at the outlet of the at least one pore is no lower than the intake speed of the carrier gas loaded with at least one precursor of the oxide in, non-preferentially, the liquid, gel or solid state thereof, on the outer surface of the component; b) injecting a carrier gas not loaded with a precursor of the oxide into a plasma inside the plasma chamber, wherein the injection of the fluid passing through the pervious component is maintained and steps a) and b) are repeated, such as to form said oxide on the outer surface, the diameter of the at least one pore being preserved.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS THEREFOR
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
ATOMISING APPARATUS
BLASTING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
ENGINE PLANTS IN GENERAL
HEATING
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
LIGHTING
MACHINES OR ENGINES IN GENERAL
MECHANICAL ENGINEERING
METALLURGY
NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAMTURBINES
NOZZLES
PERFORMING OPERATIONS
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SPRAYING APPARATUS
SPRAYING OR ATOMISING IN GENERAL
STEAM ENGINES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
WEAPONS
title METHOD AND SYSTEM FOR DEPOSITING OXIDE ON A POROUS COMPONENT
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