BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE
BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic perce...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | HOSMANE, Narayan S CHAKRABARTI, Amartya STANLEY, Shena M |
description | BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3074340A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3074340A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3074340A43</originalsourceid><addsrcrecordid>eNrjZDB28g_y91Pw8wwJ8nRxVXD0c1HwdQ3x8HdR8HdTCAjydwl19vRzV0BRxcPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4l0DjA3MTYxNDBxNjIlQAgBAbyaE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE</title><source>esp@cenet</source><creator>HOSMANE, Narayan S ; CHAKRABARTI, Amartya ; STANLEY, Shena M</creator><creatorcontrib>HOSMANE, Narayan S ; CHAKRABARTI, Amartya ; STANLEY, Shena M</creatorcontrib><description>BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS ; INORGANIC CHEMISTRY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170705&DB=EPODOC&CC=EP&NR=3074340A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170705&DB=EPODOC&CC=EP&NR=3074340A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOSMANE, Narayan S</creatorcontrib><creatorcontrib>CHAKRABARTI, Amartya</creatorcontrib><creatorcontrib>STANLEY, Shena M</creatorcontrib><title>BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE</title><description>BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB28g_y91Pw8wwJ8nRxVXD0c1HwdQ3x8HdR8HdTCAjydwl19vRzV0BRxcPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4l0DjA3MTYxNDBxNjIlQAgBAbyaE</recordid><startdate>20170705</startdate><enddate>20170705</enddate><creator>HOSMANE, Narayan S</creator><creator>CHAKRABARTI, Amartya</creator><creator>STANLEY, Shena M</creator><scope>EVB</scope></search><sort><creationdate>20170705</creationdate><title>BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE</title><author>HOSMANE, Narayan S ; CHAKRABARTI, Amartya ; STANLEY, Shena M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3074340A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>HOSMANE, Narayan S</creatorcontrib><creatorcontrib>CHAKRABARTI, Amartya</creatorcontrib><creatorcontrib>STANLEY, Shena M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOSMANE, Narayan S</au><au>CHAKRABARTI, Amartya</au><au>STANLEY, Shena M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE</title><date>2017-07-05</date><risdate>2017</risdate><abstract>BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP3074340A4 |
source | esp@cenet |
subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | BORON NITRIDE AND METHOD OF PRODUCING BORON NITRIDE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T09%3A00%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HOSMANE,%20Narayan%20S&rft.date=2017-07-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3074340A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |