PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM
The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and gro...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | EJIRI, Hiroe KAWASHITA, Mamoru |
| description | The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3073808B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3073808B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3073808B13</originalsourceid><addsrcrecordid>eNrjZPAO8HEM9nVUcA5zUXBxDfN0dlVw9HNR8HUN8fB3UXDzD1LwdfQLdXN0DgkN8vRzV3BUCA51Cg4JcgxxVQj3DPEACoR4ePopuHn6-PIwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAGMDc2MLAwsnQ2MilAAA8qQsxg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM</title><source>esp@cenet</source><creator>EJIRI, Hiroe ; KAWASHITA, Mamoru</creator><creatorcontrib>EJIRI, Hiroe ; KAWASHITA, Mamoru</creatorcontrib><description>The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200923&DB=EPODOC&CC=EP&NR=3073808B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200923&DB=EPODOC&CC=EP&NR=3073808B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EJIRI, Hiroe</creatorcontrib><creatorcontrib>KAWASHITA, Mamoru</creatorcontrib><title>PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM</title><description>The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAO8HEM9nVUcA5zUXBxDfN0dlVw9HNR8HUN8fB3UXDzD1LwdfQLdXN0DgkN8vRzV3BUCA51Cg4JcgxxVQj3DPEACoR4ePopuHn6-PIwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAGMDc2MLAwsnQ2MilAAA8qQsxg</recordid><startdate>20200923</startdate><enddate>20200923</enddate><creator>EJIRI, Hiroe</creator><creator>KAWASHITA, Mamoru</creator><scope>EVB</scope></search><sort><creationdate>20200923</creationdate><title>PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM</title><author>EJIRI, Hiroe ; KAWASHITA, Mamoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3073808B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>EJIRI, Hiroe</creatorcontrib><creatorcontrib>KAWASHITA, Mamoru</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EJIRI, Hiroe</au><au>KAWASHITA, Mamoru</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM</title><date>2020-09-23</date><risdate>2020</risdate><abstract>The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP3073808B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING A SUBSTRATE WITH A THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T03%3A12%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=EJIRI,%20Hiroe&rft.date=2020-09-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3073808B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |