SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

The semiconductor device includes a first inverter (10) and a second inverter (20) which is connected thereto in series. Each of the first and the second inverters includes a p-channel transistor and an n-channel transistor, respectively. The number of projection semiconductor layers each as the act...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: OKAGAKI, TAKESHI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The semiconductor device includes a first inverter (10) and a second inverter (20) which is connected thereto in series. Each of the first and the second inverters includes a p-channel transistor and an n-channel transistor, respectively. The number of projection semiconductor layers each as the active region of the p-channel and the n-channel transistors of the second inverter is smaller than the number of the projection semiconductor layers each as the active region of the p-channel and the n-channel transistors of the first inverter.