SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS
Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfi...
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| creator | RAHHAL-ORABI, NADIA SUNDARARAJAN, SHAKUNTALA TROEGER, RALPH T HARPER, MICHAEL GULER, LEONARD |
| description | Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer. |
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In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160831&DB=EPODOC&CC=EP&NR=3061123A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160831&DB=EPODOC&CC=EP&NR=3061123A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAHHAL-ORABI, NADIA</creatorcontrib><creatorcontrib>SUNDARARAJAN, SHAKUNTALA</creatorcontrib><creatorcontrib>TROEGER, RALPH T</creatorcontrib><creatorcontrib>HARPER, MICHAEL</creatorcontrib><creatorcontrib>GULER, LEONARD</creatorcontrib><title>SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS</title><description>Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMdnQO8nTzdPZ09FHwdQxxDQIx3PyDFIJDgjwDAjz93IHCwd4g2scx0jUomIeBNS0xpziVF0pzMyi4uYY4e-imFuTHpxYXJCan5qWWxLsGGBuYGRoaGTsaGhOhBAAQEiYq</recordid><startdate>20160831</startdate><enddate>20160831</enddate><creator>RAHHAL-ORABI, NADIA</creator><creator>SUNDARARAJAN, SHAKUNTALA</creator><creator>TROEGER, RALPH T</creator><creator>HARPER, MICHAEL</creator><creator>GULER, LEONARD</creator><scope>EVB</scope></search><sort><creationdate>20160831</creationdate><title>SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS</title><author>RAHHAL-ORABI, NADIA ; SUNDARARAJAN, SHAKUNTALA ; TROEGER, RALPH T ; HARPER, MICHAEL ; GULER, LEONARD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3061123A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RAHHAL-ORABI, NADIA</creatorcontrib><creatorcontrib>SUNDARARAJAN, SHAKUNTALA</creatorcontrib><creatorcontrib>TROEGER, RALPH T</creatorcontrib><creatorcontrib>HARPER, MICHAEL</creatorcontrib><creatorcontrib>GULER, LEONARD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAHHAL-ORABI, NADIA</au><au>SUNDARARAJAN, SHAKUNTALA</au><au>TROEGER, RALPH T</au><au>HARPER, MICHAEL</au><au>GULER, LEONARD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS</title><date>2016-08-31</date><risdate>2016</risdate><abstract>Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS |
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