RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP
A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer...
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| creator | VAN DER WIEL, Appolonius Jacobus SCHWARZ, Uwe DE WINTER, Rudi |
| description | A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity. |
| format | Patent |
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In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.</description><language>eng ; fre ; ger</language><subject>MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL ; METERING BY VOLUME ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; TESTING ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210127&DB=EPODOC&CC=EP&NR=3029445B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210127&DB=EPODOC&CC=EP&NR=3029445B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VAN DER WIEL, Appolonius Jacobus</creatorcontrib><creatorcontrib>SCHWARZ, Uwe</creatorcontrib><creatorcontrib>DE WINTER, Rudi</creatorcontrib><title>RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP</title><description>A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. 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In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL METERING BY VOLUME MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TESTING TRANSPORTING |
| title | RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP |
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