LIL ENHANCED ESD-PNP IN A BCD

LIL ENHANCED ESD-PNP IN A BCD

Disclosed is a PNP ESD integrated circuit, including a substrate, an active region formed within the substrate, the active region including at least one base region of a second conductivity type, a plurality of collector regions of a first conductivity type formed within the active region, a plurali...

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Hauptverfasser: HUITSING, Albert Jan, CLAES, Jan
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HUITSING, Albert Jan
CLAES, Jan
description Disclosed is a PNP ESD integrated circuit, including a substrate, an active region formed within the substrate, the active region including at least one base region of a second conductivity type, a plurality of collector regions of a first conductivity type formed within the active region, a plurality of emitter regions of the first conductivity type formed within the active region, and a local interconnect layer (LIL) contacting the plurality of emitter regions and the plurality of collector regions, the LIL including cooling fin contacts formed on the collector regions to enhance the current handling capacity of the collector regions.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LIL ENHANCED ESD-PNP IN A BCD
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