METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
According to one embodiment, a manufacturing method of a semiconductor device (100) includes: the transferring of a first group (11) of semiconductor chips (10) from a first support (31) to a second support (32); the deforming of the second support (32) to convert a first pitch between the chips (10...
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| creator | Endo, Mitsuyoshi |
| description | According to one embodiment, a manufacturing method of a semiconductor device (100) includes: the transferring of a first group (11) of semiconductor chips (10) from a first support (31) to a second support (32); the deforming of the second support (32) to convert a first pitch between the chips (10) transferred on the second support (32) into a second pitch different from the first pitch; the forming of an insulating layer (20) around each of the chips (10) arranged with the second pitch in the first group (11) to cover each of the chips (10) with the insulating layer (20); and the dicing of the insulating layer (20). The first group (11) is selected from a plurality of chips (10) arranged with an initial pitch on the first support (31). The first group (11) is arranged with the first pitch being longer than the initial pitch. |
| format | Patent |
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The first group (11) is selected from a plurality of chips (10) arranged with an initial pitch on the first support (31). The first group (11) is arranged with the first pitch being longer than the initial pitch.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210217&DB=EPODOC&CC=EP&NR=2998991B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210217&DB=EPODOC&CC=EP&NR=2998991B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Endo, Mitsuyoshi</creatorcontrib><title>METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE</title><description>According to one embodiment, a manufacturing method of a semiconductor device (100) includes: the transferring of a first group (11) of semiconductor chips (10) from a first support (31) to a second support (32); the deforming of the second support (32) to convert a first pitch between the chips (10) transferred on the second support (32) into a second pitch different from the first pitch; the forming of an insulating layer (20) around each of the chips (10) arranged with the second pitch in the first group (11) to cover each of the chips (10) with the insulating layer (20); and the dicing of the insulating layer (20). The first group (11) is selected from a plurality of chips (10) arranged with an initial pitch on the first support (31). The first group (11) is arranged with the first pitch being longer than the initial pitch.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwdQ3x8HcJVnDzD1LwdfQLdXN0DgkN8vRzV3BUCHb19XT293MJdQ4Byrq4hnk6u_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXACNLSwtLS0MnQ2MilAAA8GgmHg</recordid><startdate>20210217</startdate><enddate>20210217</enddate><creator>Endo, Mitsuyoshi</creator><scope>EVB</scope></search><sort><creationdate>20210217</creationdate><title>METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE</title><author>Endo, Mitsuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2998991B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Endo, Mitsuyoshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Endo, Mitsuyoshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE</title><date>2021-02-17</date><risdate>2021</risdate><abstract>According to one embodiment, a manufacturing method of a semiconductor device (100) includes: the transferring of a first group (11) of semiconductor chips (10) from a first support (31) to a second support (32); the deforming of the second support (32) to convert a first pitch between the chips (10) transferred on the second support (32) into a second pitch different from the first pitch; the forming of an insulating layer (20) around each of the chips (10) arranged with the second pitch in the first group (11) to cover each of the chips (10) with the insulating layer (20); and the dicing of the insulating layer (20). The first group (11) is selected from a plurality of chips (10) arranged with an initial pitch on the first support (31). The first group (11) is arranged with the first pitch being longer than the initial pitch.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
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