POWER SEMICONDUCTOR MODULE DRIVE CONTROL SYSTEM AND POWER SEMICONDUCTOR MODULE CONTROL CIRCUIT

An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an...

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Bibliographische Detailangaben
Hauptverfasser: TERASAWA, Noriho, MOMOSE, Yasuyuki
Format: Patent
Sprache:eng ; fre ; ger
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