POWER SEMICONDUCTOR MODULE DRIVE CONTROL SYSTEM AND POWER SEMICONDUCTOR MODULE CONTROL CIRCUIT
An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!