PATTERNED INORGANIC LAYERS, RADIATION BASED PATTERNING COMPOSITIONS AND CORRESPONDING METHODS

A structure comprising a substrate and a patterned inorganic material on a surface of the substrate, wherein the patterned inorganic material has edges with an average line-width roughness from 1.2 nm to 2.0 nm at a pitch of no more than about 60 nm.

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Hauptverfasser:	Telecky, Alan J, Kreszler, Douglas A, Stowers, Jason K, Grenville, Andrew
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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creator	Telecky, Alan J Kreszler, Douglas A Stowers, Jason K Grenville, Andrew
description	A structure comprising a substrate and a patterned inorganic material on a surface of the substrate, wherein the patterned inorganic material has edges with an average line-width roughness from 1.2 nm to 2.0 nm at a pitch of no more than about 60 nm.
format	Patent
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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
title	PATTERNED INORGANIC LAYERS, RADIATION BASED PATTERNING COMPOSITIONS AND CORRESPONDING METHODS
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