PATTERNED INORGANIC LAYERS, RADIATION BASED PATTERNING COMPOSITIONS AND CORRESPONDING METHODS

A structure comprising a substrate and a patterned inorganic material on a surface of the substrate, wherein the patterned inorganic material has edges with an average line-width roughness from 1.2 nm to 2.0 nm at a pitch of no more than about 60 nm.

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Bibliographische Detailangaben
Hauptverfasser:	Telecky, Alan J, Kreszler, Douglas A, Stowers, Jason K, Grenville, Andrew
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A structure comprising a substrate and a patterned inorganic material on a surface of the substrate, wherein the patterned inorganic material has edges with an average line-width roughness from 1.2 nm to 2.0 nm at a pitch of no more than about 60 nm.