INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD

Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ALARCON-RIVERO, Manuel, Eduardo, DE WILD, Nico, Maris, Adriaan, KLOOTWIJK, Johan, Hendrik, MESCHER, Marleen
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	ALARCON-RIVERO, Manuel, Eduardo DE WILD, Nico, Maris, Adriaan KLOOTWIJK, Johan, Hendrik MESCHER, Marleen
description	Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2909614B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2909614B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2909614B13</originalsourceid><addsrcrecordid>eNrjZLDx9AtxdQ9yDHF1UXD2DHIO9QxRCPcM8VBw9nD1dXMN0Q129Qv2DwpWcPRzUfB1dQwODfL0cweyQjz8XXgYWNMSc4pTeaE0N4MCUIuzh25qQX58anFBYnJqXmpJvGuAkaWBpZmhiZOhMRFKAMdbKVY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD</title><source>esp@cenet</source><creator>ALARCON-RIVERO, Manuel, Eduardo ; DE WILD, Nico, Maris, Adriaan ; KLOOTWIJK, Johan, Hendrik ; MESCHER, Marleen</creator><creatorcontrib>ALARCON-RIVERO, Manuel, Eduardo ; DE WILD, Nico, Maris, Adriaan ; KLOOTWIJK, Johan, Hendrik ; MESCHER, Marleen</creatorcontrib><description>Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.</description><language>eng ; fre ; ger</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161214&DB=EPODOC&CC=EP&NR=2909614B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161214&DB=EPODOC&CC=EP&NR=2909614B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ALARCON-RIVERO, Manuel, Eduardo</creatorcontrib><creatorcontrib>DE WILD, Nico, Maris, Adriaan</creatorcontrib><creatorcontrib>KLOOTWIJK, Johan, Hendrik</creatorcontrib><creatorcontrib>MESCHER, Marleen</creatorcontrib><title>INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD</title><description>Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDx9AtxdQ9yDHF1UXD2DHIO9QxRCPcM8VBw9nD1dXMN0Q129Qv2DwpWcPRzUfB1dQwODfL0cweyQjz8XXgYWNMSc4pTeaE0N4MCUIuzh25qQX58anFBYnJqXmpJvGuAkaWBpZmhiZOhMRFKAMdbKVY</recordid><startdate>20161214</startdate><enddate>20161214</enddate><creator>ALARCON-RIVERO, Manuel, Eduardo</creator><creator>DE WILD, Nico, Maris, Adriaan</creator><creator>KLOOTWIJK, Johan, Hendrik</creator><creator>MESCHER, Marleen</creator><scope>EVB</scope></search><sort><creationdate>20161214</creationdate><title>INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD</title><author>ALARCON-RIVERO, Manuel, Eduardo ; DE WILD, Nico, Maris, Adriaan ; KLOOTWIJK, Johan, Hendrik ; MESCHER, Marleen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2909614B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2016</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ALARCON-RIVERO, Manuel, Eduardo</creatorcontrib><creatorcontrib>DE WILD, Nico, Maris, Adriaan</creatorcontrib><creatorcontrib>KLOOTWIJK, Johan, Hendrik</creatorcontrib><creatorcontrib>MESCHER, Marleen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ALARCON-RIVERO, Manuel, Eduardo</au><au>DE WILD, Nico, Maris, Adriaan</au><au>KLOOTWIJK, Johan, Hendrik</au><au>MESCHER, Marleen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD</title><date>2016-12-14</date><risdate>2016</risdate><abstract>Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; fre ; ger
recordid	cdi_epo_espacenet_EP2909614B1
source	esp@cenet
subjects	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
title	INTEGRATED CIRCUIT WITH CHEMFET-SENSORS AND MEASURING METHOD
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T07%3A06%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ALARCON-RIVERO,%20Manuel,%20Eduardo&rft.date=2016-12-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2909614B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true