DIRECTED SELF ASSEMBLY OF BLOCK COPOLYMERS TO FORM VIAS ALIGNED WITH INTERCONNECTS

A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NYHUS, Paul A, BRISTOL, Robert, SIVAKUMAR, Swaminathan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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