POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOREC, Jacek, YANG, Boyi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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