METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE

METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE

The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; formi...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, GUOMIN, LIU, BINBIN, WANG, ZHEWEI, CHEN, XUELEI, GAO, LIUCHUN, JIANG, LONG, ZHAO, HONGXING, JIAO, JIBIN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a nitrogen silicon compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.