Mask and method for forming the same
A mask is disclosed. The mask includes at least one support base having at least one opening formed therein; and at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and communicated to the at least one opening, are formed in t...
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| creator | YE, TIANSHENG |
| description | A mask is disclosed. The mask includes at least one support base having at least one opening formed therein; and at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and communicated to the at least one opening, are formed in the at least one positioning layer; and a width of a cross section of each opening in the at least one support base and a width of a cross section of each through openings in the at least one positioning layer reduce gradually from the support base to the positioning layer. |
| format | Patent |
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The mask includes at least one support base having at least one opening formed therein; and at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and communicated to the at least one opening, are formed in the at least one positioning layer; and a width of a cross section of each opening in the at least one support base and a width of a cross section of each through openings in the at least one positioning layer reduce gradually from the support base to the positioning layer.</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CINEMATOGRAPHY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROGRAPHY ; HOLOGRAPHY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MATERIALS THEREFOR ; METALLURGY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150114&DB=EPODOC&CC=EP&NR=2824510A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150114&DB=EPODOC&CC=EP&NR=2824510A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YE, TIANSHENG</creatorcontrib><title>Mask and method for forming the same</title><description>A mask is disclosed. The mask includes at least one support base having at least one opening formed therein; and at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and communicated to the at least one opening, are formed in the at least one positioning layer; and a width of a cross section of each opening in the at least one support base and a width of a cross section of each through openings in the at least one positioning layer reduce gradually from the support base to the positioning layer.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDxTSzOVkjMS1HITS3JyE9RSMsvAuHczLx0hZKMVIXixNxUHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oS7xpgZGFkYmpo4GhoTIQSAIPzJb8</recordid><startdate>20150114</startdate><enddate>20150114</enddate><creator>YE, TIANSHENG</creator><scope>EVB</scope></search><sort><creationdate>20150114</creationdate><title>Mask and method for forming the same</title><author>YE, TIANSHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2824510A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2015</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YE, TIANSHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YE, TIANSHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mask and method for forming the same</title><date>2015-01-14</date><risdate>2015</risdate><abstract>A mask is disclosed. The mask includes at least one support base having at least one opening formed therein; and at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and communicated to the at least one opening, are formed in the at least one positioning layer; and a width of a cross section of each opening in the at least one support base and a width of a cross section of each through openings in the at least one positioning layer reduce gradually from the support base to the positioning layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP2824510A1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Mask and method for forming the same |
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