COMPOSITE SUBSTRATE

Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and...

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1. Verfasser:	KITADA, Masanobu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KITADA, Masanobu
description	Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2822026B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2822026B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2822026B13</originalsourceid><addsrcrecordid>eNrjZBB29vcN8A_2DHFVCA51Cg4Jcgxx5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BRhZGRgZGZk6GxkQoAQA23x4g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COMPOSITE SUBSTRATE</title><source>esp@cenet</source><creator>KITADA, Masanobu</creator><creatorcontrib>KITADA, Masanobu</creatorcontrib><description>Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180314&DB=EPODOC&CC=EP&NR=2822026B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180314&DB=EPODOC&CC=EP&NR=2822026B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KITADA, Masanobu</creatorcontrib><title>COMPOSITE SUBSTRATE</title><description>Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB29vcN8A_2DHFVCA51Cg4Jcgxx5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BRhZGRgZGZk6GxkQoAQA23x4g</recordid><startdate>20180314</startdate><enddate>20180314</enddate><creator>KITADA, Masanobu</creator><scope>EVB</scope></search><sort><creationdate>20180314</creationdate><title>COMPOSITE SUBSTRATE</title><author>KITADA, Masanobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2822026B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KITADA, Masanobu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KITADA, Masanobu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITE SUBSTRATE</title><date>2018-03-14</date><risdate>2018</risdate><abstract>Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.</abstract><oa>free_for_read</oa></addata></record>
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language	eng ; fre ; ger
recordid	cdi_epo_espacenet_EP2822026B1
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	COMPOSITE SUBSTRATE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T07%3A34%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KITADA,%20Masanobu&rft.date=2018-03-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2822026B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true