SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME

An aspect of this sputtering target has a component composition including 0.1 mass% to 1.5 mass% of In with a remainder of Ag and inevitable impurities, wherein an average grain diameter of crystal grains in an alloy is in a range of 30 µm or more to less than 150 µm, and a dispersion of grain diame...

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Bibliographische Detailangaben
Hauptverfasser:	KOIKE, Shinya, KOMIYAMA, Shozo, OKUDA, Sei, FUNAKI, Shinichi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METALLURGY PERFORMING OPERATIONS PUNCHING METAL ROLLING OF METAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS
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