Dual-band semiconductor RF amplifier device

There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (C O ), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L 1 ) connec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Walesieniuk, Ania, Gutta, Venkata, Volgers, Rob
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY
Online-Zugang:	Volltext bestellen
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