Light guiding for vertical external cavity surface emitting laser

The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Debernardi, Pierluigi, Zogg, Hans, Fill, Matthias, Felder, Ferdinand
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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