Semiconductor device
A flip chip semiconductor device comprising: a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device; a metal layer on a second surface of said device, said second surface opposite said first surface; a substrate layer adjacent said metal lay...
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| creator | Owyang, King Chen, Qufei Chen, Kuo-In Terrill, Kyle Lui, Kam Hong Katraro, Reuven Wong, Ronald Kasem, Mohammed Xu, Robert Pattanayak, Deva Choi, Calvin |
| description | A flip chip semiconductor device comprising:
a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device;
a metal layer on a second surface of said device, said second surface opposite said first surface;
a substrate layer adjacent said metal layer, wherein said substrate layer is separated from said drain contact by an intervening layer; and
a plurality of trench elements filled with electrically conductive material and coupled to said drain contact, wherein said trench elements pass through said intervening layer and into said substrate layer, wherein in operation said device comprises a circuit from a source contact through said intervening layer, said substrate layer, and said trench elements to said drain contact. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2802013B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2802013B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2802013B13</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUYWBkYGhsZOhsZEKAEAHkQgdA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>Owyang, King ; Chen, Qufei ; Chen, Kuo-In ; Terrill, Kyle ; Lui, Kam Hong ; Katraro, Reuven ; Wong, Ronald ; Kasem, Mohammed ; Xu, Robert ; Pattanayak, Deva ; Choi, Calvin</creator><creatorcontrib>Owyang, King ; Chen, Qufei ; Chen, Kuo-In ; Terrill, Kyle ; Lui, Kam Hong ; Katraro, Reuven ; Wong, Ronald ; Kasem, Mohammed ; Xu, Robert ; Pattanayak, Deva ; Choi, Calvin</creatorcontrib><description>A flip chip semiconductor device comprising:
a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device;
a metal layer on a second surface of said device, said second surface opposite said first surface;
a substrate layer adjacent said metal layer, wherein said substrate layer is separated from said drain contact by an intervening layer; and
a plurality of trench elements filled with electrically conductive material and coupled to said drain contact, wherein said trench elements pass through said intervening layer and into said substrate layer, wherein in operation said device comprises a circuit from a source contact through said intervening layer, said substrate layer, and said trench elements to said drain contact.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190612&DB=EPODOC&CC=EP&NR=2802013B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190612&DB=EPODOC&CC=EP&NR=2802013B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Owyang, King</creatorcontrib><creatorcontrib>Chen, Qufei</creatorcontrib><creatorcontrib>Chen, Kuo-In</creatorcontrib><creatorcontrib>Terrill, Kyle</creatorcontrib><creatorcontrib>Lui, Kam Hong</creatorcontrib><creatorcontrib>Katraro, Reuven</creatorcontrib><creatorcontrib>Wong, Ronald</creatorcontrib><creatorcontrib>Kasem, Mohammed</creatorcontrib><creatorcontrib>Xu, Robert</creatorcontrib><creatorcontrib>Pattanayak, Deva</creatorcontrib><creatorcontrib>Choi, Calvin</creatorcontrib><title>Semiconductor device</title><description>A flip chip semiconductor device comprising:
a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device;
a metal layer on a second surface of said device, said second surface opposite said first surface;
a substrate layer adjacent said metal layer, wherein said substrate layer is separated from said drain contact by an intervening layer; and
a plurality of trench elements filled with electrically conductive material and coupled to said drain contact, wherein said trench elements pass through said intervening layer and into said substrate layer, wherein in operation said device comprises a circuit from a source contact through said intervening layer, said substrate layer, and said trench elements to said drain contact.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUYWBkYGhsZOhsZEKAEAHkQgdA</recordid><startdate>20190612</startdate><enddate>20190612</enddate><creator>Owyang, King</creator><creator>Chen, Qufei</creator><creator>Chen, Kuo-In</creator><creator>Terrill, Kyle</creator><creator>Lui, Kam Hong</creator><creator>Katraro, Reuven</creator><creator>Wong, Ronald</creator><creator>Kasem, Mohammed</creator><creator>Xu, Robert</creator><creator>Pattanayak, Deva</creator><creator>Choi, Calvin</creator><scope>EVB</scope></search><sort><creationdate>20190612</creationdate><title>Semiconductor device</title><author>Owyang, King ; Chen, Qufei ; Chen, Kuo-In ; Terrill, Kyle ; Lui, Kam Hong ; Katraro, Reuven ; Wong, Ronald ; Kasem, Mohammed ; Xu, Robert ; Pattanayak, Deva ; Choi, Calvin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2802013B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Owyang, King</creatorcontrib><creatorcontrib>Chen, Qufei</creatorcontrib><creatorcontrib>Chen, Kuo-In</creatorcontrib><creatorcontrib>Terrill, Kyle</creatorcontrib><creatorcontrib>Lui, Kam Hong</creatorcontrib><creatorcontrib>Katraro, Reuven</creatorcontrib><creatorcontrib>Wong, Ronald</creatorcontrib><creatorcontrib>Kasem, Mohammed</creatorcontrib><creatorcontrib>Xu, Robert</creatorcontrib><creatorcontrib>Pattanayak, Deva</creatorcontrib><creatorcontrib>Choi, Calvin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Owyang, King</au><au>Chen, Qufei</au><au>Chen, Kuo-In</au><au>Terrill, Kyle</au><au>Lui, Kam Hong</au><au>Katraro, Reuven</au><au>Wong, Ronald</au><au>Kasem, Mohammed</au><au>Xu, Robert</au><au>Pattanayak, Deva</au><au>Choi, Calvin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2019-06-12</date><risdate>2019</risdate><abstract>A flip chip semiconductor device comprising:
a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device;
a metal layer on a second surface of said device, said second surface opposite said first surface;
a substrate layer adjacent said metal layer, wherein said substrate layer is separated from said drain contact by an intervening layer; and
a plurality of trench elements filled with electrically conductive material and coupled to said drain contact, wherein said trench elements pass through said intervening layer and into said substrate layer, wherein in operation said device comprises a circuit from a source contact through said intervening layer, said substrate layer, and said trench elements to said drain contact.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device |
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