SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A technique for improving characteristics of a semiconductor device (DMOSFET) is provided. A semiconductor device is configured so as to include: an n-type source layer (102) disposed on an upper portion of a first surface side of an SiC substrate (106) ; a p body layer (103) which surrounds the sou...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATSUMOTO, DAISUKE, TEGA, NAOKI, SHIMAMOTO, YASUHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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