Integrated circuits including integrated passive devices and methods of manufacture thereof

Embodiments of integrated passive devices (100, 1100) (e.g., metal insulator metal, or MIM, capacitors) and methods of their formation include depositing (206, 212) a composite electrode (120, 820) over a semiconductor substrate (300) (e.g., on a dielectric layer (112, 312) above the substrate surface), and depositing (208) an insulator layer (140, 1040) over the composite electrode. The composite electrode includes an underlying electrode (122, 822) and an overlying electrode (124, 824) deposited on a top surface (123) of the underlying electrode. The underlying electrode is formed from a first conductive material (e.g., AlCuW), and the overlying electrode is formed from a second, different conductive material (e.g., AlCu). The top surface (123) of the underlying electrode may have a relatively rough surface morphology, and the top surface (125) of the overlying electrode may have a relatively smooth surface morphology. For high frequency, high power applications, both the composite electrode and the insulator layer may be thicker than in some conventional integrated passive devices.