FIELD EFFECT TRANSISTOR DEVICES WITH LOW SOURCE RESISTANCE

A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel reg...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PALMOUR, JOHN, CHENG, LIN, JONAS, CHARLOTTE, CAPELL, DOYLE CRAIG, DHAR, SARIT, AGARWAL, ANANT, RYU, SEI-HYUNG
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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