LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS

Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent...

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Hauptverfasser:	SINGH, BALJIT, DOVE, CURTIS, TESNADO, EDUARD, GIL PARAN, BALOOCH, MEHDI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SINGH, BALJIT DOVE, CURTIS TESNADO, EDUARD, GIL PARAN BALOOCH, MEHDI
description	Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.
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title	LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
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