METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS

METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS

The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected,...

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Hauptverfasser: BRUCHHAUS, RAINER, WASER, RAINER, TAPPERTZHOFEN, STEFAN, LENTZ, FLORIAN, VALOV, ILIA, ROSEZIN, ROLAND, DANIEL, NIELEN, LUTZ, LINN, EIKE
Format: Patent
Sprache:eng ; fre ; ger
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator BRUCHHAUS, RAINER
WASER, RAINER
TAPPERTZHOFEN, STEFAN
LENTZ, FLORIAN
VALOV, ILIA
ROSEZIN, ROLAND, DANIEL
NIELEN, LUTZ
LINN, EIKE
description The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected, where a memory cell (A) in the state A0/A1 carries out respective contributions than another memory cell (B) in the state B0/B1. Alternating voltage drop (Vmess) is measured over the memory element, where the memory element is designed as a layer of active material. An independent claim is also included for a memory element.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2678863B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2678863B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2678863B13</originalsourceid><addsrcrecordid>eNrjZLD1dQ3x8HdRcPMPUvDz93NxDQ4JCnUO8Qxz9YlUCHJ1dPH0cwfSwZ7BIDEFX1df_6BIBVcfV19Xv5BgHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oS7xpgZGZuYWFm7GRoTIQSAB4pKhY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS</title><source>esp@cenet</source><creator>BRUCHHAUS, RAINER ; WASER, RAINER ; TAPPERTZHOFEN, STEFAN ; LENTZ, FLORIAN ; VALOV, ILIA ; ROSEZIN, ROLAND, DANIEL ; NIELEN, LUTZ ; LINN, EIKE</creator><creatorcontrib>BRUCHHAUS, RAINER ; WASER, RAINER ; TAPPERTZHOFEN, STEFAN ; LENTZ, FLORIAN ; VALOV, ILIA ; ROSEZIN, ROLAND, DANIEL ; NIELEN, LUTZ ; LINN, EIKE</creatorcontrib><description>The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected, where a memory cell (A) in the state A0/A1 carries out respective contributions than another memory cell (B) in the state B0/B1. Alternating voltage drop (Vmess) is measured over the memory element, where the memory element is designed as a layer of active material. An independent claim is also included for a memory element.</description><language>eng ; fre ; ger</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150429&amp;DB=EPODOC&amp;CC=EP&amp;NR=2678863B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150429&amp;DB=EPODOC&amp;CC=EP&amp;NR=2678863B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BRUCHHAUS, RAINER</creatorcontrib><creatorcontrib>WASER, RAINER</creatorcontrib><creatorcontrib>TAPPERTZHOFEN, STEFAN</creatorcontrib><creatorcontrib>LENTZ, FLORIAN</creatorcontrib><creatorcontrib>VALOV, ILIA</creatorcontrib><creatorcontrib>ROSEZIN, ROLAND, DANIEL</creatorcontrib><creatorcontrib>NIELEN, LUTZ</creatorcontrib><creatorcontrib>LINN, EIKE</creatorcontrib><title>METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS</title><description>The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected, where a memory cell (A) in the state A0/A1 carries out respective contributions than another memory cell (B) in the state B0/B1. Alternating voltage drop (Vmess) is measured over the memory element, where the memory element is designed as a layer of active material. An independent claim is also included for a memory element.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1dQ3x8HdRcPMPUvDz93NxDQ4JCnUO8Qxz9YlUCHJ1dPH0cwfSwZ7BIDEFX1df_6BIBVcfV19Xv5BgHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oS7xpgZGZuYWFm7GRoTIQSAB4pKhY</recordid><startdate>20150429</startdate><enddate>20150429</enddate><creator>BRUCHHAUS, RAINER</creator><creator>WASER, RAINER</creator><creator>TAPPERTZHOFEN, STEFAN</creator><creator>LENTZ, FLORIAN</creator><creator>VALOV, ILIA</creator><creator>ROSEZIN, ROLAND, DANIEL</creator><creator>NIELEN, LUTZ</creator><creator>LINN, EIKE</creator><scope>EVB</scope></search><sort><creationdate>20150429</creationdate><title>METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS</title><author>BRUCHHAUS, RAINER ; WASER, RAINER ; TAPPERTZHOFEN, STEFAN ; LENTZ, FLORIAN ; VALOV, ILIA ; ROSEZIN, ROLAND, DANIEL ; NIELEN, LUTZ ; LINN, EIKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2678863B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2015</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>BRUCHHAUS, RAINER</creatorcontrib><creatorcontrib>WASER, RAINER</creatorcontrib><creatorcontrib>TAPPERTZHOFEN, STEFAN</creatorcontrib><creatorcontrib>LENTZ, FLORIAN</creatorcontrib><creatorcontrib>VALOV, ILIA</creatorcontrib><creatorcontrib>ROSEZIN, ROLAND, DANIEL</creatorcontrib><creatorcontrib>NIELEN, LUTZ</creatorcontrib><creatorcontrib>LINN, EIKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BRUCHHAUS, RAINER</au><au>WASER, RAINER</au><au>TAPPERTZHOFEN, STEFAN</au><au>LENTZ, FLORIAN</au><au>VALOV, ILIA</au><au>ROSEZIN, ROLAND, DANIEL</au><au>NIELEN, LUTZ</au><au>LINN, EIKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS</title><date>2015-04-29</date><risdate>2015</risdate><abstract>The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected, where a memory cell (A) in the state A0/A1 carries out respective contributions than another memory cell (B) in the state B0/B1. Alternating voltage drop (Vmess) is measured over the memory element, where the memory element is designed as a layer of active material. An independent claim is also included for a memory element.</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title METHOD FOR NONDESTRUCTIVELY READING RESISTIVE MEMORY ELEMENTS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T09%3A01%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BRUCHHAUS,%20RAINER&rft.date=2015-04-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2678863B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true