LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER

Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting laye...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM, Yoo Jin, KIM, Jung Doo, JUNG, Jung Hwa, JUNG, Seoung Ho, KIM, Min Hye
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KIM, Yoo Jin
KIM, Jung Doo
JUNG, Jung Hwa
JUNG, Seoung Ho
KIM, Min Hye
description Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2673812B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2673812B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2673812B13</originalsourceid><addsrcrecordid>eNrjZLDw8XT3CFFw9fUMCfH0c1dwcQ3zdHZV8HAMA_HCHcNcfVz93EM8FJz9_cJcg8BqfBwjXYN4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CRmbmxhaGRk6ExEUoAItIoOg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER</title><source>esp@cenet</source><creator>KIM, Yoo Jin ; KIM, Jung Doo ; JUNG, Jung Hwa ; JUNG, Seoung Ho ; KIM, Min Hye</creator><creatorcontrib>KIM, Yoo Jin ; KIM, Jung Doo ; JUNG, Jung Hwa ; JUNG, Seoung Ho ; KIM, Min Hye</creatorcontrib><description>Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201202&amp;DB=EPODOC&amp;CC=EP&amp;NR=2673812B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201202&amp;DB=EPODOC&amp;CC=EP&amp;NR=2673812B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, Yoo Jin</creatorcontrib><creatorcontrib>KIM, Jung Doo</creatorcontrib><creatorcontrib>JUNG, Jung Hwa</creatorcontrib><creatorcontrib>JUNG, Seoung Ho</creatorcontrib><creatorcontrib>KIM, Min Hye</creatorcontrib><title>LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER</title><description>Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDw8XT3CFFw9fUMCfH0c1dwcQ3zdHZV8HAMA_HCHcNcfVz93EM8FJz9_cJcg8BqfBwjXYN4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CRmbmxhaGRk6ExEUoAItIoOg</recordid><startdate>20201202</startdate><enddate>20201202</enddate><creator>KIM, Yoo Jin</creator><creator>KIM, Jung Doo</creator><creator>JUNG, Jung Hwa</creator><creator>JUNG, Seoung Ho</creator><creator>KIM, Min Hye</creator><scope>EVB</scope></search><sort><creationdate>20201202</creationdate><title>LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER</title><author>KIM, Yoo Jin ; KIM, Jung Doo ; JUNG, Jung Hwa ; JUNG, Seoung Ho ; KIM, Min Hye</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2673812B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, Yoo Jin</creatorcontrib><creatorcontrib>KIM, Jung Doo</creatorcontrib><creatorcontrib>JUNG, Jung Hwa</creatorcontrib><creatorcontrib>JUNG, Seoung Ho</creatorcontrib><creatorcontrib>KIM, Min Hye</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, Yoo Jin</au><au>KIM, Jung Doo</au><au>JUNG, Jung Hwa</au><au>JUNG, Seoung Ho</au><au>KIM, Min Hye</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER</title><date>2020-12-02</date><risdate>2020</risdate><abstract>Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2673812B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T07%3A05%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM,%20Yoo%20Jin&rft.date=2020-12-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2673812B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true