NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS

Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN, Yongfen, BARTEL, Joseph August, TULSKY, Eric, WELCH, Eric, TREADWAY, Joseph
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHEN, Yongfen
BARTEL, Joseph August
TULSKY, Eric
WELCH, Eric
TREADWAY, Joseph
description Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2658711B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2658711B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2658711B13</originalsourceid><addsrcrecordid>eNrjZNDzc_Tzdw6KDA5x9AlWCPcM8VDw8HT3UHCNCPH0cw7x9PdTcPZ3dXPzdPZ09QsJ5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BRmamFuaGhk6GxkQoAQC_ayWv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS</title><source>esp@cenet</source><creator>CHEN, Yongfen ; BARTEL, Joseph August ; TULSKY, Eric ; WELCH, Eric ; TREADWAY, Joseph</creator><creatorcontrib>CHEN, Yongfen ; BARTEL, Joseph August ; TULSKY, Eric ; WELCH, Eric ; TREADWAY, Joseph</creatorcontrib><description>Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRICITY ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190612&amp;DB=EPODOC&amp;CC=EP&amp;NR=2658711B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190612&amp;DB=EPODOC&amp;CC=EP&amp;NR=2658711B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN, Yongfen</creatorcontrib><creatorcontrib>BARTEL, Joseph August</creatorcontrib><creatorcontrib>TULSKY, Eric</creatorcontrib><creatorcontrib>WELCH, Eric</creatorcontrib><creatorcontrib>TREADWAY, Joseph</creatorcontrib><title>NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS</title><description>Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRICITY</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzc_Tzdw6KDA5x9AlWCPcM8VDw8HT3UHCNCPH0cw7x9PdTcPZ3dXPzdPZ09QsJ5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BRmamFuaGhk6GxkQoAQC_ayWv</recordid><startdate>20190612</startdate><enddate>20190612</enddate><creator>CHEN, Yongfen</creator><creator>BARTEL, Joseph August</creator><creator>TULSKY, Eric</creator><creator>WELCH, Eric</creator><creator>TREADWAY, Joseph</creator><scope>EVB</scope></search><sort><creationdate>20190612</creationdate><title>NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS</title><author>CHEN, Yongfen ; BARTEL, Joseph August ; TULSKY, Eric ; WELCH, Eric ; TREADWAY, Joseph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2658711B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRICITY</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN, Yongfen</creatorcontrib><creatorcontrib>BARTEL, Joseph August</creatorcontrib><creatorcontrib>TULSKY, Eric</creatorcontrib><creatorcontrib>WELCH, Eric</creatorcontrib><creatorcontrib>TREADWAY, Joseph</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN, Yongfen</au><au>BARTEL, Joseph August</au><au>TULSKY, Eric</au><au>WELCH, Eric</au><au>TREADWAY, Joseph</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS</title><date>2019-06-12</date><risdate>2019</risdate><abstract>Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2658711B1
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T19%3A28%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN,%20Yongfen&rft.date=2019-06-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2658711B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true