METHOD FOR CONVERTING SEMICONDUCTOR LAYERS

The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WIEBER, STEPHAN, STENNER, PATRIK, COELLE, MICHAEL, PATZ, MATTHIAS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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