METHOD FOR CONVERTING SEMICONDUCTOR LAYERS
The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma...
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| creator | WIEBER, STEPHAN STENNER, PATRIK COELLE, MICHAEL PATZ, MATTHIAS |
| description | The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention. |
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The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131009&DB=EPODOC&CC=EP&NR=2647264A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131009&DB=EPODOC&CC=EP&NR=2647264A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WIEBER, STEPHAN</creatorcontrib><creatorcontrib>STENNER, PATRIK</creatorcontrib><creatorcontrib>COELLE, MICHAEL</creatorcontrib><creatorcontrib>PATZ, MATTHIAS</creatorcontrib><title>METHOD FOR CONVERTING SEMICONDUCTOR LAYERS</title><description>The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). 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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | METHOD FOR CONVERTING SEMICONDUCTOR LAYERS |
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