Method of manufacturing silicon single crystal

[Subject] To provide a method of manufacturing a silicon single crystal, capable of suppressing generation of dislocation extending from a neck portion to a straight part of ingot. [Solving Means] A method of manufacturing a silicon single crystal according to this invention includes the steps of pr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OKABE, KOUJI, LEHMANN, LOTHAR
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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