Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell

A multijunction solar cell including an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap; a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Aiken, Daniel J, Sharps, Paul R, Cho, Benjamin, Spann, John, Stan, Mark A, Cornfeld, Arthur, Patel, Pravin
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Aiken, Daniel J
Sharps, Paul R
Cho, Benjamin
Spann, John
Stan, Mark A
Cornfeld, Arthur
Patel, Pravin
description A multijunction solar cell including an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap. A first graded interlayer is provided adjacent to said third solar subcell; said first graded interlayer having a fourth band gap greater than said third band gap. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell having a fifth band gap smaller than said third band gap such that said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; said second graded interlayer having a sixth band gap greater than said fifth band gap; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fifth band gap such that said fifth subcell is lattice mismatched with respect to said fourth subcell.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2610924B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2610924B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2610924B13</originalsourceid><addsrcrecordid>eNqNy7EKwjAQgOEsDqK-w72A0FYRXJUW3Rzcy5GeJHLJheRq8e0FEcHN6V--f27sOT4oKw0QSDFITs5bCCOrv4_RqpcIRRgzWGKGyasDneRHMz4pF8A4gJMg308lva-lmd2QC60-XRjo2uvxtKYkPZWEliJp316aXV3tm-2h3vxBXr26PxY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell</title><source>esp@cenet</source><creator>Aiken, Daniel J ; Sharps, Paul R ; Cho, Benjamin ; Spann, John ; Stan, Mark A ; Cornfeld, Arthur ; Patel, Pravin</creator><creatorcontrib>Aiken, Daniel J ; Sharps, Paul R ; Cho, Benjamin ; Spann, John ; Stan, Mark A ; Cornfeld, Arthur ; Patel, Pravin</creatorcontrib><description>A multijunction solar cell including an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap. A first graded interlayer is provided adjacent to said third solar subcell; said first graded interlayer having a fourth band gap greater than said third band gap. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell having a fifth band gap smaller than said third band gap such that said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; said second graded interlayer having a sixth band gap greater than said fifth band gap; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fifth band gap such that said fifth subcell is lattice mismatched with respect to said fourth subcell.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190911&amp;DB=EPODOC&amp;CC=EP&amp;NR=2610924B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190911&amp;DB=EPODOC&amp;CC=EP&amp;NR=2610924B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Aiken, Daniel J</creatorcontrib><creatorcontrib>Sharps, Paul R</creatorcontrib><creatorcontrib>Cho, Benjamin</creatorcontrib><creatorcontrib>Spann, John</creatorcontrib><creatorcontrib>Stan, Mark A</creatorcontrib><creatorcontrib>Cornfeld, Arthur</creatorcontrib><creatorcontrib>Patel, Pravin</creatorcontrib><title>Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell</title><description>A multijunction solar cell including an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap. A first graded interlayer is provided adjacent to said third solar subcell; said first graded interlayer having a fourth band gap greater than said third band gap. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell having a fifth band gap smaller than said third band gap such that said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; said second graded interlayer having a sixth band gap greater than said fifth band gap; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fifth band gap such that said fifth subcell is lattice mismatched with respect to said fourth subcell.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAQgOEsDqK-w72A0FYRXJUW3Rzcy5GeJHLJheRq8e0FEcHN6V--f27sOT4oKw0QSDFITs5bCCOrv4_RqpcIRRgzWGKGyasDneRHMz4pF8A4gJMg308lva-lmd2QC60-XRjo2uvxtKYkPZWEliJp316aXV3tm-2h3vxBXr26PxY</recordid><startdate>20190911</startdate><enddate>20190911</enddate><creator>Aiken, Daniel J</creator><creator>Sharps, Paul R</creator><creator>Cho, Benjamin</creator><creator>Spann, John</creator><creator>Stan, Mark A</creator><creator>Cornfeld, Arthur</creator><creator>Patel, Pravin</creator><scope>EVB</scope></search><sort><creationdate>20190911</creationdate><title>Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell</title><author>Aiken, Daniel J ; Sharps, Paul R ; Cho, Benjamin ; Spann, John ; Stan, Mark A ; Cornfeld, Arthur ; Patel, Pravin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2610924B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Aiken, Daniel J</creatorcontrib><creatorcontrib>Sharps, Paul R</creatorcontrib><creatorcontrib>Cho, Benjamin</creatorcontrib><creatorcontrib>Spann, John</creatorcontrib><creatorcontrib>Stan, Mark A</creatorcontrib><creatorcontrib>Cornfeld, Arthur</creatorcontrib><creatorcontrib>Patel, Pravin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aiken, Daniel J</au><au>Sharps, Paul R</au><au>Cho, Benjamin</au><au>Spann, John</au><au>Stan, Mark A</au><au>Cornfeld, Arthur</au><au>Patel, Pravin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell</title><date>2019-09-11</date><risdate>2019</risdate><abstract>A multijunction solar cell including an upper first solar subcell having a first band gap, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap. A first graded interlayer is provided adjacent to said third solar subcell; said first graded interlayer having a fourth band gap greater than said third band gap. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell having a fifth band gap smaller than said third band gap such that said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; said second graded interlayer having a sixth band gap greater than said fifth band gap; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap smaller than said fifth band gap such that said fifth subcell is lattice mismatched with respect to said fourth subcell.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2610924B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T12%3A02%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Aiken,%20Daniel%20J&rft.date=2019-09-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2610924B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true