PROCESS FOR DIRECT BONDING TWO ELEMENTS COMPRISING COPPER PORTIONS AND DIELECTRIC MATERIALS

A process of assembly by direct bonding of a first and second element, each having a surface including copper portions separated by a dielectric material, the process includes: polishing the surfaces such that the surfaces to be assembled allow assembly by bonding; forming a diffusion barrier select...

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Hauptverfasser: DI CIOCCIO, Léa, GUEGUEN, Pierric
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creator DI CIOCCIO, Léa
GUEGUEN, Pierric
description A process of assembly by direct bonding of a first and second element, each having a surface including copper portions separated by a dielectric material, the process includes: polishing the surfaces such that the surfaces to be assembled allow assembly by bonding; forming a diffusion barrier selectively in copper portions of the first and second elements, wherein the surface of the diffusion barrier of the first and second elements is level with the surface, to within less than 5 nanometers; and bringing the two surfaces into contact, such that the copper portions of one surface cover at least partly the copper portions of the other surface, and such that direct bonding is obtained between the surfaces.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PROCESS FOR DIRECT BONDING TWO ELEMENTS COMPRISING COPPER PORTIONS AND DIELECTRIC MATERIALS
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