PHOTOELECTRIC CONVERSION DEVICE

It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device (10) comprises an electrode layer (2), a first semiconductor layer (3) located on the electrode layer (2) and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer (4) located on the first semiconductor layer (3) and forming a pn junction with the first semiconductor layer (3). In the photoelectric conversion device (10), the first semiconductor layer (3) has a higher molar concentration of oxygen in a part located on the electrode layer (2) side with respect to a center portion in a lamination direction of the first semiconductor layer (3) than a molar concentration of oxygen in the whole of the first semiconductor layer (3).