Method and system for forming a metallic structure
Method of forming a metallic structure (2) in a micro-machined recess that is provided in a surface of a semiconductor substrate (8). The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the...
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| creator | VAN DER DONCK, JACQUES COR JOHAN ROOZEBOOM, FREDDY BULLEMA, JAN EITE BRESSERS, PETRUS MARINUS MARTINUS CORNELUS |
| description | Method of forming a metallic structure (2) in a micro-machined recess that is provided in a surface of a semiconductor substrate (8). The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the recess with the protrusion and defining in the recess a gap (14) along the protrusion. The method comprises driving a deposition fluid (20) through the gap in the recess along the protrusion. The method comprises growing in the gap the metallic structure by depositing metal ions contained by the deposition fluid. The method comprises moving the protrusion and the substrate relative to each other so that the protrusion, while being positioned in the recess, moves relative to the recess in a direction out of the recess, thus giving way for the growing of the metallic structure, and forming the metallic structure in the recess. |
| format | Patent |
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The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the recess with the protrusion and defining in the recess a gap (14) along the protrusion. The method comprises driving a deposition fluid (20) through the gap in the recess along the protrusion. The method comprises growing in the gap the metallic structure by depositing metal ions contained by the deposition fluid. The method comprises moving the protrusion and the substrate relative to each other so that the protrusion, while being positioned in the recess, moves relative to the recess in a direction out of the recess, thus giving way for the growing of the metallic structure, and forming the metallic structure in the recess.</description><language>eng ; fre ; ger</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130220&DB=EPODOC&CC=EP&NR=2560196A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130220&DB=EPODOC&CC=EP&NR=2560196A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VAN DER DONCK, JACQUES COR JOHAN</creatorcontrib><creatorcontrib>ROOZEBOOM, FREDDY</creatorcontrib><creatorcontrib>BULLEMA, JAN EITE</creatorcontrib><creatorcontrib>BRESSERS, PETRUS MARINUS MARTINUS CORNELUS</creatorcontrib><title>Method and system for forming a metallic structure</title><description>Method of forming a metallic structure (2) in a micro-machined recess that is provided in a surface of a semiconductor substrate (8). The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the recess with the protrusion and defining in the recess a gap (14) along the protrusion. The method comprises driving a deposition fluid (20) through the gap in the recess along the protrusion. The method comprises growing in the gap the metallic structure by depositing metal ions contained by the deposition fluid. The method comprises moving the protrusion and the substrate relative to each other so that the protrusion, while being positioned in the recess, moves relative to the recess in a direction out of the recess, thus giving way for the growing of the metallic structure, and forming the metallic structure in the recess.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDyTS3JyE9RSMxLUSiuLC5JzVVIyy8C4dzMvHSFRIXc1JLEnJzMZIXikqLS5JLSolQeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhLvGmBkamZgaGnmaGhMhBIAa5Irqg</recordid><startdate>20130220</startdate><enddate>20130220</enddate><creator>VAN DER DONCK, JACQUES COR JOHAN</creator><creator>ROOZEBOOM, FREDDY</creator><creator>BULLEMA, JAN EITE</creator><creator>BRESSERS, PETRUS MARINUS MARTINUS CORNELUS</creator><scope>EVB</scope></search><sort><creationdate>20130220</creationdate><title>Method and system for forming a metallic structure</title><author>VAN DER DONCK, JACQUES COR JOHAN ; ROOZEBOOM, FREDDY ; BULLEMA, JAN EITE ; BRESSERS, PETRUS MARINUS MARTINUS CORNELUS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2560196A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2013</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>VAN DER DONCK, JACQUES COR JOHAN</creatorcontrib><creatorcontrib>ROOZEBOOM, FREDDY</creatorcontrib><creatorcontrib>BULLEMA, JAN EITE</creatorcontrib><creatorcontrib>BRESSERS, PETRUS MARINUS MARTINUS CORNELUS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VAN DER DONCK, JACQUES COR JOHAN</au><au>ROOZEBOOM, FREDDY</au><au>BULLEMA, JAN EITE</au><au>BRESSERS, PETRUS MARINUS MARTINUS CORNELUS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and system for forming a metallic structure</title><date>2013-02-20</date><risdate>2013</risdate><abstract>Method of forming a metallic structure (2) in a micro-machined recess that is provided in a surface of a semiconductor substrate (8). The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the recess with the protrusion and defining in the recess a gap (14) along the protrusion. The method comprises driving a deposition fluid (20) through the gap in the recess along the protrusion. The method comprises growing in the gap the metallic structure by depositing metal ions contained by the deposition fluid. The method comprises moving the protrusion and the substrate relative to each other so that the protrusion, while being positioned in the recess, moves relative to the recess in a direction out of the recess, thus giving way for the growing of the metallic structure, and forming the metallic structure in the recess.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and system for forming a metallic structure |
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