METHOD FOR COATING A SUBSTRATE INSIDE A VACUUM CHAMBER BY MEANS OF PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION
The invention relates to a device for depositing a layer on a substrate (2) inside a vacuum chamber (1) by means of plasma-assisted chemical vapor deposition, comprising at least one inlet (3) for introducing at least one gas into the vacuum chamber (1) and at least one magnetron (4) equipped with a...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The invention relates to a device for depositing a layer on a substrate (2) inside a vacuum chamber (1) by means of plasma-assisted chemical vapor deposition, comprising at least one inlet (3) for introducing at least one gas into the vacuum chamber (1) and at least one magnetron (4) equipped with a target (5; 9) for producing a plasma, wherein the target (5; 9) has a temperature of at least 300 °C at least in one region during the deposition of the layer. |
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